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Diodes


API Technologies specializes in offering fully customized, high performance and high reliability silicon microwave diodes for space, satellite and mega constellation applications. Our PIN, LIM, Step Recovery & Tuning Varactor microwave diodes provide broadband performance from 1 MHz to 20 GHz in ceramic packages ideal for switching, attenuator and control applications.

Our years of robust heritage coupled with our skilled design and production staff provides OEM companies with high quality, custom microwave semiconductor products as well as higher level assemblies. Manufactured in a Class H & K facility and tested to MIL-STD-883 and MIL-STD-202, API’s microwave diodes for space are amongst the most robust and reliable on the market.

API’s space diode heritage includes SkyNet, Immarsat and Iridium Next.

RF Diodes

Fully customized wafer manufacture of Pin, Lim, Step recovery & tuning Varactor microwave diodes.

RF Diodes

Diodes are among the most
robust and reliable on the market.

RF Diodes

API Technologies specializes in offering
fully customized solutions.

RF Diodes

Our engineering staff has many years of both practical experience and design expertise.

RF Diodes

High quality, consistent, on time
microwave semi conductor products.

RF Diodes

Customized microwave semiconductors
and higher level assemblies.

RF Diodes

R/D, design process, prototyping, pre-production and production support.

Frequency Multiplier, Tuning Varactor Diodes & PIN Diodes


Frequency Multiplier Diodes

Silicon Step Recovery Diodes

These diodes find application in high efficiency multiplier and up/down converter applications and for comb generators.

Features:
  • Breakdown Voltage up to 75V
  • 50-1500 Snap Time
  • Thermal Resistance: 12°C/W- 60°C/W
Learn More:

› Enquire about Frequency Multiplier Diodes

Tuning Varactor Diodes

Ceramic Packaged Silicon Tuning Varactor Diodes

Tuning Varactor Diodes are ideally suited for frequency tuning applications up to 20 GHz. These devices are designed for use in solid state electronic tuning of transistor, Gunn and IMPATT oscillators. They may also be used in tunable filters, phase shifters up and down converters and low order multipliers.

Features:
  • Breakdown Voltage up to 60V
  • Storage/Operating Temperature range -65°C to +150°C
  • Up to 7.3 CTO/CT VB
Learn More:

› Enquire about Turning Varactor Diodes

PIN Diodes

The ML 4600 Series of PIN and NIP diodes are designed for control applications such as RF switching limiting, duplexing, phase shifting, modulation and pulse forming.

Features:
  • Breakdown Voltage up to 200V
  • Minority Carrier Lifetime from 150ns- 400ns
  • Switching Time up to 40ns
Learn More:

› Enquire about PIN and NIP Diodes

ML 4650 high breakdown PIN diodes exhibit low thermal resistance and are designed for use in high power switches, receiver protectors are phase shifters from 0.1 to 18 GHz.

Features:
  • Breakdown Voltage up to 600V
  • Forward Resistance from 0.7Ohms-1.3Ohms
  • Switching Time up to 300ns
Learn More:

› Enquire about High Power PIN Diodes

These PIN devices are intended for microstrip or stripline control circuits as well as for direct replacements for existing non-hermetic epoxy encapsulated devices. They can function as power switches, limiters, phase-shifters, attenuators and duplexers.

Features:
  • Frequency range of 0.1GHz-12.0 GHz
  • Isolation: 25dB
  • Switching Time up to 150ns
Learn More:

› Enquire about Broadband PIN Diodes

API’s series of passivated PIN diode chips have an optimally tailored profile and sputtered gold metallisation. Our total in-house capabilities allows or broad spectrum of epitaxial resistivities and thickness for specific design requirements.

Features:
  • Breakdown Voltage up to 500V
  • Minority Carrier Lifetime from 10ns - 380ns
  • Reverse Recovery Time up to 40ns
Learn More:

› Enquire about Passivated PIN Diodes

The reduced series resistance makes the low capacitance versions ideally suited to high frequency operations.

Features:
  • Minority Carrier Lifetime: 10ns-400ns
  • Switching Time up to 40ns
  • Breakdown Voltage up to 200V
Learn More:

› Enquire about Plated Heatsink PIN Diodes

The ML 4200 Series is a range or oxide passivated silicon mesa diodes designed for limiter applications, especially those requiring low turn-on.

Features:
  • Breakdown Voltage up to 50V
  • Forward Resistance up to 1.5Ohms
  • Threshold up to 15dB
Learn More:

› Enquire about Limiter PIN Diodes

Applications & Quality

Applications

To download more information about our diodes, click here! To message to one of our engineers about our available diodes, click here! To request pricing information about our available diode types, click here!

Frequency Multiplier Diodes, Tuning Varactor Diodes, and PIN Diodes are designed for control applications.

  • Switches
  • Limiters
  • Duplexers
  • Phase shifters
  • Modulation

Quality

To download more information about our diodes, click here! To message to one of our engineers about our available diodes, click here! To request pricing information about our available diode types, click here!

Through our state-of-the-art, MIL-PRF-38534 Class K certified facilities in Marlborough, MA, USA and Great Yarmouth, United Kingdom, API Technologies can satisfy the most stringent quality assurance requirements demanded by the world’s tier one space contractors. Our facilities offer a wide range of in-house mechanical and environmental screening and auto-electrical testing for element evaluation as well as completed product qualification. API has an independently managed, ISO 17025 accredited test facility providing full environmental testing against IECQ, MIL-STD-883 and MIL-STD-202 test methods.

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